Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

A novel and scalable method enabling the integration of dissimilar thin-film devices for high density large-area sensors is demonstrated. The validated by integrating CdS/CdTe P-N diodes with poly-Si transistors (TFTs) in an active pixel sensor (APS) scheme. These have been used separately low-cost applications such as liquid-crystal displays (Poly-TFTs) solar cells (CdS/CdTe) methods allow a seamless that eliminates use discrete pixel-to-pixel bumping interconnections. APSs, consisting cascode TFT amplifier diode, are evaluated using pulsed light sources under several wavelengths intensities. results demonstrated responsivity increase >100× integrated well-defined signal amplitude, desirable energy intensity monitoring. enables two remarkable wide range X-ray imagers, gamma-ray detectors, thermal neutron while offering compatibility. More importantly, integrity reliability TFTs not affected process.